advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 100v simple drive requirement r ds(on) 80m fast switching characteristic i d 23a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice 1 200906033 a p25n10gs/p-hf halogen-free product 0.77 parameter parameter rating 100 + 20 linear derating factor storage temperature range 23 14.6 80 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 -55 to 150 96 g d s g d s to-220(p) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-263(s) the to-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap25n10gp) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 100 - - v b ? , ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =16a, v gs =0v - - 1.3 v t rr reverse recovery time i s =16a, v gs =0v - 90 - ns q rr reverse recovery charge di/dt=100a/s - 380 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap25n10gs/p-hf 3.surface mounted on 1 in 2 copper pad of fr4 board
a p25n10gs/p-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g = 5 .0v 10v 9.0 v 8.0 v 7.0 v 0 10 20 30 40 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c v g = 5 .0v 10v 9.0v 8 .0v 7.0 v 50 70 90 110 130 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =16a v g =10v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
ap25n10gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 10v q gs q gd q g charge 1 10 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0 5 10 15 20 25 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =25 o c v ds =5v 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =48v v ds =64v v ds =80v i d =16a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 duty=0.5 single pulse 0. 2 t j =150 o c
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